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| inchange semiconductor product specification silicon npn power transistors 2sd733 2SD733K description ? with to-3 package ? complement to type 2sb697/697k ? high power dissipation applications ? power amplifier applications ? recommended for high-power high-fidelity audio frequency amplifier output stage pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2sd733 160 v cbo collector-base voltage 2SD733K open emitter 180 v 2sd733 140 v ceo collector-emitter voltage 2SD733K open base 160 v v ebo emitter-base voltage open collector 6 v i c collector current 12 a i cm collector current-peak 20 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -40~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2sd733 2SD733K characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sd733 140 v (br)ceo collector-emitter breakdown voltage 2SD733K i c =50ma ;i b =0 160 v 2sd733 160 v (br)cbo collector-emitter breakdown voltage 2SD733K i c =5ma ;i e =0 180 v v (br)ebo emitter-base breakdown voltage i e =5ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =6a; i b =0.6a 0.7 2.5 v v be base-emitter on voltage i c =1a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =80v; i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =-5v 40 320 h fe-2 dc current gain i c =5a ; v ce =5v 20 f t transition frequency i c =1a ; v ce =5v 15 mhz ? h fe-1 classifications c d e f 40-80 60-120 100-200 160-320 inchange semiconductor product specification 3 silicon npn power transistors 2sd733 2SD733K package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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